Home > News
  print button email button

Thursday, June 14, 2012

New transistor can slash gadget power consumption

Kyodo

Researchers have developed a transistor capable of slashing the power consumption of semiconductors by more than 90 percent, possibly paving the way for sharply prolonging battery life in smartphones and reducing wasted energy in digital home electronics while in standby mode, Hokkaido University announced.

News photo
Fine discovery: An electron microscope shows ultrafine needles arrayed in high densities on a new silicon platform that could slash semiconductors' power consumption. KYODO

With the product, which runs on less electricity than the conventional theoretical limit for transistors, "every electronics device can conserve energy," said team member Katsuhiro Tomioka.

After successfully arraying ultrafine needles about 80 nanometers in diameter in high densities on the surface of a silicon platform, the team made a transistor using the needles for a circuit, the university said.

They achieved so-called electron tunneling, a phenomenon in which electrons tunnel through the joints between the needles and the platform, making possible the low-power transistor, the school said.

Because transistors are used as an element in large-scale integrated (LSI) circuits, businesses around the world are in competition to develop one using electron tunneling as a technology essential for next-generation LSIs, it said.



We welcome your opinions. Click to send a message to the editor.

The Japan Times

Article 2 of 10 in Business news

Previous Next



Back to Top

About us |  Work for us |  Contact us |  Privacy policy |  Link policy |  Registration FAQ
Advertise in japantimes.co.jp.
This site has been optimized for modern browsers. Please make sure that Javascript is enabled in your browser's preferences.
The Japan Times Ltd. All rights reserved.